1 12/13/01 supertex inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." supertex does not assume responsibility for use of devices described and limits its liabi lity to the replacement of devices determined to be defective due to workmanship. no responsibility is assumed for possible omissions or inaccuracies. circuitry and specifications are subject to c hange without notice. for the latest product specifications, refer to the supertex website: http://www.supertex.com. for complete liability information on all supertex products, refer to the most curre nt databook or to the legal/disclaimer page on the supertex website. LND250 advanced dmos technology the lnd2 is a high voltage n-channel depletion mode (normally- on) transistor utilizing supertex?s lateral dmos technology. the gate is esd protected. the lnd2 is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, volt- age ramp generation and amplification. ordering information bv dsx /r ds(on) i dss bv dgx (max) (min) to-236ab* 500v 1.0k ? 1.0ma LND250k1 order number / package n-channel depletion-mode mosfet features ? esd gate protection ? free from secondary breakdown ? low power drive requirement ? ease of paralleling ? excellent thermal stability ? integral source-drain diode ? high input impedance and low c iss applications ? solid state relays ? normally-on switches ? converters ? power supply circuits ? constant current sources ? input protection circuits absolute maximum ratings drain-to-source voltage bv dsx drain-to-gate voltage bv dgx gate-to-source voltage 20v operating and storage temperature -55 c to +150 c soldering temperature* 300 c * distance of 1.6 mm from case for 10 seconds. product marking for sot-23: nde ? where ? = 2-week alpha date code package options t o-236ab (sot-23) top view *same as sot-23. all units shipped on 3,000 piece carrier tape reels. source gate drain note: see package outline section for dimensions.
2 1235 bordeaux drive, sunnyvale, ca 94089 tel: (408) 744-0100 ? fax: (408) 222-4895 www.supertex.com 12/13/010 ?2001 supertex inc. all rights reserved. unauthorized use or reproduction prohibited. 90% 10% 90% 90% 10% 10% pulse generator v dd r l output d.u.t. t (on) t d(on) t (off) t d(off) t f t r input input output 0v v dd r gen 0v -10v symbol parameter min typ max unit conditions bv dsx drain-to-source breakdown voltage 500 v v gs = -10v, i d = 1.0ma v gs(off) gate-to-source off voltage -1.0 -3.0 v v ds = 25v, i d = 100na ? v gs(off) change in v gs(off) with temperature 5.0 mv/ cv ds = 25v, i d = 100na i gss gate body leakage current 100 na v gs = 20v, v ds = 0v i d(off) drain-to-source leakage current 100 na v gs = -10v, v ds = 450v 100 av gs = -10v, v ds = 0.8v max rating t a =125 c i dss saturated drain-to-source current 1.0 3.0 ma v gs = 0v, v ds = 25v r ds(on) static drain-to-source on-state resistance 850 1k ? v gs = 0v, i d = 0.5ma ? r ds(on) change in r ds(on) with temperature 1.2 %/ cv gs = 0v, i d = 0.5ma g fs forward transconductance 1.0 2.0 m v gs = 0v, i d = 1.0ma c iss input capacitance 7.5 10 v gs = -10v, v ds = 25v c oss output capacitance 2.0 3.5 pf f = 1mhz c rss reverse transfer capacitance 0.5 1.0 t d(on) turn-on delay time 0.09 v dd = 25v, i d = 1.0ma, tr rise time 0.45 r gen = 25 ? t d(off) turn-off delay time 0.1 t f fall time 1.3 v sd diode forward voltage drop 0.9 v v gs = -10v, i sd = 1.0ma t rr reverse recovery time 200 ns v gs = -10v, i sd = 1.0ma notes: 1. all d.c. parameters 100% tested at 25 c unless otherwise stated. (pulse test: 300 s pulse, 2% duty cycle.) 2. all a.c. parameters sample tested. thermal characteristics package i d (continuous)* i d (pulsed) power dissipation jc ja i dr i drm * @t a = 25 c c/w c/w t o-236ab 13ma 30ma 0.36w 200 350 13ma 30ma * i d (continuous) is limited by max rated t f . electrical characteristics (@ 25 c unless otherwise specified) s ? switching waveforms and test circuit LND250
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